This resulted in a very reduced work functionality as well as the formation of the Schottky Make contact with between the BrGO and n-style Si substrate. As a consequence of the upper proportion of B-C and B-C3 bonding within the BrGO/Si machine than that inside the rGO/Si, the lessened Schottky https://www.directivepublications.org/journal-of-applied-nanoscience/